HP8S36TB
Rohm Semiconductor
Rohm Semiconductor
30V NCH+NCH MIDDLE POWER MOSFET,
$0.00
Available to order
Reference Price (USD)
2,500+
$0.58800
Exquisite packaging
Discount
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The HP8S36TB from Rohm Semiconductor is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, HP8S36TB delivers consistent quality. Contact us now to learn more and secure your supply of Rohm Semiconductor s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 27A, 80A
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V
- Power - Max: 29W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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