SI4200DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 25V 8A 8SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$0.25425
Exquisite packaging
Discount
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Discover high-performance SI4200DY-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Vishay Siliconix s SI4200DY-T1-GE3 enhance your projects with superior quality and performance.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 25mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 13V
- Power - Max: 2.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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