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IRFHE4250DTRPBF

Infineon Technologies
IRFHE4250DTRPBF Preview
Infineon Technologies
MOSFET 2N-CH 25V 86A/303A PQFN
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Specifications

  • Product Status: Obsolete
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 86A, 303A
  • Rds On (Max) @ Id, Vgs: 2.75mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V
  • Power - Max: 156W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 32-PowerWFQFN
  • Supplier Device Package: 32-PQFN (6x6)

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