HGTP10N120BN
onsemi
onsemi
IGBT 1200V 35A 298W TO220AB
$2.15
Available to order
Reference Price (USD)
800+
$1.87608
Exquisite packaging
Discount
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Optimize power control with HGTP10N120BN Single IGBTs from onsemi, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. onsemi ensures HGTP10N120BN meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Last Time Buy
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
- Power - Max: 298 W
- Switching Energy: 320µJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 23ns/165ns
- Test Condition: 960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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