HGTG27N60C3DR
Harris Corporation
Harris Corporation
UFS SERIES N-CHANNEL IGBT
$5.96
Available to order
Reference Price (USD)
1+
$5.96000
500+
$5.9004
1000+
$5.8408
1500+
$5.7812
2000+
$5.7216
2500+
$5.662
Exquisite packaging
Discount
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The HGTG27N60C3DR Single IGBT from Harris Corporation redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Harris Corporation stands behind every HGTG27N60C3DR with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 108 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 27A
- Power - Max: 208 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 212 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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