DMT64M8LCG-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V V-DFN3333
$0.44
Available to order
Reference Price (USD)
1+
$0.43705
500+
$0.4326795
1000+
$0.428309
1500+
$0.4239385
2000+
$0.419568
2500+
$0.4151975
Exquisite packaging
Discount
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Discover high-performance DMT64M8LCG-7 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMT64M8LCG-7 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 77.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2664 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 990mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8 (Type B)
- Package / Case: 8-PowerVDFN
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