PJMF190N60E1_T0_00001
Panjit International Inc.
Panjit International Inc.
600V SUPER JUNCITON MOSFET
$3.14
Available to order
Reference Price (USD)
1+
$3.14000
500+
$3.1086
1000+
$3.0772
1500+
$3.0458
2000+
$3.0144
2500+
$2.983
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with PJMF190N60E1_T0_00001 by Panjit International Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, PJMF190N60E1_T0_00001 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB-F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
Related Products
onsemi
FCH22N60N
Vishay Siliconix
SIHU7N60E-E3
Toshiba Semiconductor and Storage
SSM3K15F,LF
Infineon Technologies
IPB100N04S2L-03ATMA2
Microchip Technology
APT34F100L
IXYS
IXFB210N30P3
Vishay Siliconix
SUP80090E-GE3
Microchip Technology
VP0808L-G
Renesas Electronics America Inc
NP83P06PDG-E1-AY
Fairchild Semiconductor