FQD7N30TM
onsemi
onsemi
MOSFET N-CH 300V 5.5A DPAK
$1.31
Available to order
Reference Price (USD)
2,500+
$0.50612
5,000+
$0.48221
12,500+
$0.46513
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
FQD7N30TM by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FQD7N30TM ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 2.75A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Microchip Technology
APT19F100J
Diodes Incorporated
DMG3420U-7
Microsemi Corporation
APT36N90BC3G
Nexperia USA Inc.
PMN28UNEX
Rohm Semiconductor
SCT3022ALGC11
Infineon Technologies
IRF7493TRPBF
Vishay Siliconix
SUM90N10-8M2P-E3
onsemi
FCP600N65S3R0
Renesas Electronics America Inc
BB504CDS-WS-E
Vishay Siliconix