DMG3420U-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 5.47A SOT23-3
$0.42
Available to order
Reference Price (USD)
3,000+
$0.08160
6,000+
$0.07412
15,000+
$0.06664
30,000+
$0.06290
75,000+
$0.05654
150,000+
$0.05467
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMG3420U-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMG3420U-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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