SCT3022ALGC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 93A TO247N
$55.53
Available to order
Reference Price (USD)
1+
$42.07000
10+
$39.24500
30+
$37.60000
120+
$34.07500
270+
$32.90000
Exquisite packaging
Discount
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Boost your electronic applications with SCT3022ALGC11, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SCT3022ALGC11 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
- Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 339W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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