FQB12P20TM
onsemi
onsemi
MOSFET P-CH 200V 11.5A D2PAK
$2.14
Available to order
Reference Price (USD)
800+
$0.83883
1,600+
$0.76177
2,400+
$0.71361
5,600+
$0.67990
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with FQB12P20TM, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, FQB12P20TM provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPI120N04S401AKSA1
Toshiba Semiconductor and Storage
SSM3K72KCT,L3F
Infineon Technologies
IMBF170R1K0M1XTMA1
Diodes Incorporated
DMG301NU-7
Nexperia USA Inc.
BUK7Y7R8-80EX
NXP USA Inc.
BUK9529-100B/C127
STMicroelectronics
STP6NK60ZFP
IXYS
IXTH160N10T
IXYS
IXFH180N20X3
Diodes Incorporated