IXFH180N20X3
IXYS
IXYS
MOSFET N-CH 200V 180A TO247
$16.97
Available to order
Reference Price (USD)
1+
$11.62000
30+
$9.76800
120+
$8.97600
510+
$7.65600
1,020+
$7.39200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXFH180N20X3 by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXFH180N20X3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
DMN6068SE-13
Infineon Technologies
IRF9540NSTRRPBF
Vishay Siliconix
IRF610SPBF
Vishay Siliconix
SIR186DP-T1-RE3
Fairchild Semiconductor
ISL9N2357D3ST
IXYS
IXFP38N30X3
Infineon Technologies
IPAW60R280P7SXKSA1
Vishay Siliconix
IRFU120PBF
Vishay Siliconix
IRL620PBF-BE3
STMicroelectronics