IMBF170R1K0M1XTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1700V 5.2A TO263-7
$7.29
Available to order
Reference Price (USD)
1+
$7.29000
500+
$7.2171
1000+
$7.1442
1500+
$7.0713
2000+
$6.9984
2500+
$6.9255
Exquisite packaging
Discount
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Experience the power of IMBF170R1K0M1XTMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IMBF170R1K0M1XTMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
- Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-13
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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