FQA38N30
Fairchild Semiconductor
Fairchild Semiconductor
38.4A, 300V, N-CHANNEL, MOSFET
$3.76
Available to order
Reference Price (USD)
1+
$3.76000
500+
$3.7224
1000+
$3.6848
1500+
$3.6472
2000+
$3.6096
2500+
$3.572
Exquisite packaging
Discount
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Discover FQA38N30, a versatile Transistors - FETs, MOSFETs - Single solution from Fairchild Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 38.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 19.2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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