FGHL40T65MQDT
onsemi
onsemi
FS4 MID SPEED IGBT 650V 40A TO24
$4.06
Available to order
Reference Price (USD)
1+
$4.06000
500+
$4.0194
1000+
$3.9788
1500+
$3.9382
2000+
$3.8976
2500+
$3.857
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FGHL40T65MQDT Single IGBT from onsemi delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. onsemi's commitment to innovation ensures FGHL40T65MQDT meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
- Power - Max: 238 W
- Switching Energy: 880µJ (on), 490µJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: 18ns/75ns
- Test Condition: 400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr): 86 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
IXYS
IXA4IF1200TC-TRL
Harris Corporation
HGTH20N50E1D
Renesas Electronics America Inc
CT30VM-8#G01
Rohm Semiconductor
RGWX5TS65EHRC11
onsemi
AFGHL25T120RHD
Harris Corporation
HGTH20N50E1
Harris Corporation
HGTP10N40C1
Harris Corporation
HGTG24N60D1
Infineon Technologies
IKN04N60RC2ATMA1
onsemi