NGTD17T65F2WP
onsemi
onsemi
IGBT TRENCH FIELD STOP 650V DIE
$2.06
Available to order
Reference Price (USD)
149+
$2.15886
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NGTD17T65F2WP Single IGBT from onsemi delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. onsemi's commitment to innovation ensures NGTD17T65F2WP meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
IXYS
IXA4IF1200UC-TUB
onsemi
NGTD21T65F2SWK
Infineon Technologies
IKWH70N65WR6XKSA1
IXYS
IXBT2N250-TR
IXYS
IXYH30N120A4
IXYS
IXYP30N120B4
Infineon Technologies
FZ2400R12HP4B9NPSA1
IXYS
IXYH20N65C3D1
IXYS
IXYP20N120C4
IXYS