HGTH20N50E1
Harris Corporation
Harris Corporation
20A, 500V, N-CHANNEL IGBT
$3.14
Available to order
Reference Price (USD)
1+
$3.14000
500+
$3.1086
1000+
$3.0772
1500+
$3.0458
2000+
$3.0144
2500+
$2.983
Exquisite packaging
Discount
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Choose HGTH20N50E1 Single IGBTs by Harris Corporation for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Harris Corporation's reputation for quality makes HGTH20N50E1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 35 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
- Power - Max: 100 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 33 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-3 Isolated Tab, TO-218AC
- Supplier Device Package: TO-218 Isolated