NGB8204ANT4G
onsemi
onsemi
INSULATED GATE BIPOLAR TRANSISTO
$0.67
Available to order
Reference Price (USD)
800+
$0.82950
1,600+
$0.76125
2,400+
$0.70875
5,600+
$0.70000
Exquisite packaging
Discount
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Choose NGB8204ANT4G Single IGBTs by onsemi for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. onsemi's reputation for quality makes NGB8204ANT4G a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430 V
- Current - Collector (Ic) (Max): 18 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
- Power - Max: 115 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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