DMN6066SSD-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 3.3A 8SO
$0.91
Available to order
Reference Price (USD)
2,500+
$0.43080
5,000+
$0.40440
12,500+
$0.39120
25,000+
$0.38400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN6066SSD-13 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMN6066SSD-13 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.3A
- Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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