FDS3612
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 100V 3.4A 8SOIC
$0.61
Available to order
Reference Price (USD)
1+
$0.61000
500+
$0.6039
1000+
$0.5978
1500+
$0.5917
2000+
$0.5856
2500+
$0.5795
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Fairchild Semiconductor presents FDS3612, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FDS3612 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
STMicroelectronics
STB26N60M2
onsemi
NTLUS030N03CTAG
Rohm Semiconductor
RRF015P03GTL
Vishay Siliconix
SI7463DP-T1-E3
Diodes Incorporated
DMG1012T-13
Vishay Siliconix
SQ4470EY-T1_BE3
Infineon Technologies
IRFS7530TRLPBF
onsemi
NVTFS5811NLWFTAG
Nexperia USA Inc.
PMN30XPX
IXYS