SI7463DP-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 40V 11A PPAK SO-8
$3.08
Available to order
Reference Price (USD)
3,000+
$1.39131
6,000+
$1.34303
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SI7463DP-T1-E3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SI7463DP-T1-E3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Diodes Incorporated
DMG1012T-13
Vishay Siliconix
SQ4470EY-T1_BE3
Infineon Technologies
IRFS7530TRLPBF
onsemi
NVTFS5811NLWFTAG
Nexperia USA Inc.
PMN30XPX
IXYS
IXTH10N100D2
Nexperia USA Inc.
BUK9606-55B,118
IXYS
IXTP300N04T2
Diodes Incorporated
DMG2307LQ-7
Infineon Technologies