FDP8440
Fairchild Semiconductor
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
$2.32
Available to order
Reference Price (USD)
1+
$5.10000
10+
$4.55100
100+
$3.73180
800+
$2.73059
1,600+
$2.54854
Exquisite packaging
Discount
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Boost your electronic applications with FDP8440, a reliable Transistors - FETs, MOSFETs - Single by Fairchild Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FDP8440 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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