DMN2026UVT-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 6.2A TSOT-26
$0.15
Available to order
Reference Price (USD)
3,000+
$0.15516
Exquisite packaging
Discount
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DMN2026UVT-7 by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMN2026UVT-7 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.15W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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