R6524KNXC7G
Rohm Semiconductor
Rohm Semiconductor
650V 24A TO-220FM, HIGH-SPEED SW
$5.85
Available to order
Reference Price (USD)
1+
$5.85000
500+
$5.7915
1000+
$5.733
1500+
$5.6745
2000+
$5.616
2500+
$5.5575
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover R6524KNXC7G, a versatile Transistors - FETs, MOSFETs - Single solution from Rohm Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Nexperia USA Inc.
BUK7Y22-100EX
Vishay Siliconix
SI7328DN-T1-GE3
Vishay Siliconix
SQJ858AEP-T1_BE3
Diodes Incorporated
DMN2026UVT-7
onsemi
FDS4141
Vishay Siliconix
SIHG25N60EFL-GE3
Nexperia USA Inc.
BUK7Y4R8-60EX
Alpha & Omega Semiconductor Inc.
AON7296
Renesas Electronics America Inc
RJK0396DPA-00#J53
Texas Instruments