FDP7N50
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 500V 7A TO220-3
$0.67
Available to order
Reference Price (USD)
1,000+
$0.65835
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDP7N50 by Fairchild Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDP7N50 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
onsemi
FQPF5N50CYDTU
Toshiba Semiconductor and Storage
TW140N120C,S1F
Diodes Incorporated
ZXM64P03XTA
UnitedSiC
UF3C065030T3S
Toshiba Semiconductor and Storage
TK2R4A08QM,S4X
onsemi
NVMFS6H852NLWFT1G
Vishay Siliconix
SUD50N06-09L-E3
Vishay Siliconix
SIHF068N60EF-GE3
NXP Semiconductors
BUK6212-40C,118
Panjit International Inc.