UF3C065030T3S
UnitedSiC
UnitedSiC
MOSFET N-CH 650V 85A TO220-3
$19.94
Available to order
Reference Price (USD)
1+
$19.94000
500+
$19.7406
1000+
$19.5412
1500+
$19.3418
2000+
$19.1424
2500+
$18.943
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover UF3C065030T3S, a versatile Transistors - FETs, MOSFETs - Single solution from UnitedSiC, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 441W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Toshiba Semiconductor and Storage
TK2R4A08QM,S4X
onsemi
NVMFS6H852NLWFT1G
Vishay Siliconix
SUD50N06-09L-E3
Vishay Siliconix
SIHF068N60EF-GE3
NXP Semiconductors
BUK6212-40C,118
Panjit International Inc.
PJA3449-AU_R1_000A1
Vishay Siliconix
IRFD214PBF
Vishay Siliconix
SIHF15N60E-GE3
Infineon Technologies
IRFR3711ZTRPBF
Nexperia USA Inc.