TK2R4A08QM,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS10 TO-220SIS 80V 2.4MOHM
$3.00
Available to order
Reference Price (USD)
1+
$3.00000
500+
$2.97
1000+
$2.94
1500+
$2.91
2000+
$2.88
2500+
$2.85
Exquisite packaging
Discount
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Discover high-performance TK2R4A08QM,S4X from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, TK2R4A08QM,S4X delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
- Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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