FDD86102LZ
onsemi
onsemi
MOSFET N-CH 100V 8A/35A DPAK
$1.68
Available to order
Reference Price (USD)
2,500+
$0.51019
5,000+
$0.48609
12,500+
$0.46887
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FDD86102LZ, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FDD86102LZ meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Diodes Incorporated
DMN6066SSS-13
Alpha & Omega Semiconductor Inc.
AOTF4N90
Infineon Technologies
IPZ40N04S5L4R8ATMA1
Renesas Electronics America Inc
HAT1043M-EL-E
NXP USA Inc.
PSMN1R9-25YLC,115
Infineon Technologies
IRL530NSTRLPBF
onsemi
NVTFWS010N10MCLTAG
Toshiba Semiconductor and Storage
TJ10S04M3L,LXHQ
Microchip Technology
APT30F60J
Alpha & Omega Semiconductor Inc.