NVTFWS010N10MCLTAG
onsemi
onsemi
MOSFET N-CH 100V 11.7A 8WDFN
$0.79
Available to order
Reference Price (USD)
1+
$0.78887
500+
$0.7809813
1000+
$0.7730926
1500+
$0.7652039
2000+
$0.7573152
2500+
$0.7494265
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVTFWS010N10MCLTAG by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVTFWS010N10MCLTAG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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