PSMN1R9-25YLC,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 25V 100A LFPAK56
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
PSMN1R9-25YLC,115 by NXP USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PSMN1R9-25YLC,115 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.05mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3504 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 141W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Infineon Technologies
IRL530NSTRLPBF
onsemi
NVTFWS010N10MCLTAG
Toshiba Semiconductor and Storage
TJ10S04M3L,LXHQ
Microchip Technology
APT30F60J
Alpha & Omega Semiconductor Inc.
AON7280
onsemi
MTB55N06Z
Alpha & Omega Semiconductor Inc.
AON7524
Vishay Siliconix
IRFPF30PBF
Infineon Technologies
SPI21N50C3XKSA1
Rectron USA