FDB6676
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.72
Available to order
Reference Price (USD)
1+
$0.72000
500+
$0.7128
1000+
$0.7056
1500+
$0.6984
2000+
$0.6912
2500+
$0.684
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
FDB6676 by Fairchild Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FDB6676 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 84A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 5324 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 93W (Tc)
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IRLR2905TRPBF
Rohm Semiconductor
RSR030N06HZGTL
Renesas Electronics America Inc
RJK0455DPB-00#J5
onsemi
5LP01C-TB-H
Toshiba Semiconductor and Storage
SSM6K406TU,LF
Nexperia USA Inc.
PSMN2R2-40YSDX
onsemi
NTGS1135PT1G
Vishay Siliconix
IRF830PBF
Toshiba Semiconductor and Storage
SSM6J216FE,LF
NXP USA Inc.