EPC7014UBC
EPC Space, LLC
EPC Space, LLC
GAN FET HEMT 60V 1A COTS 4UB
$209.48
Available to order
Reference Price (USD)
1+
$209.48000
500+
$207.3852
1000+
$205.2904
1500+
$203.1956
2000+
$201.1008
2500+
$199.006
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose EPC7014UBC by EPC Space, LLC. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with EPC7014UBC inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +7V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-SMD
- Package / Case: 4-SMD, No Lead
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