RJK5014DPP-E0#T2
Renesas
Renesas
RJK5014DPP-E0#T2 - SILICON N CHA
$5.00
Available to order
Reference Price (USD)
1+
$5.00237
500+
$4.9523463
1000+
$4.9023226
1500+
$4.8522989
2000+
$4.8022752
2500+
$4.7522515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of RJK5014DPP-E0#T2, a premium Transistors - FETs, MOSFETs - Single from Renesas. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RJK5014DPP-E0#T2 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
BSS127IXTSA1
onsemi
NVB099N65S3
Diodes Incorporated
DMN2025U-13
onsemi
5HP02M-TL-E
Diodes Incorporated
DMT6005LFG-7
Diodes Incorporated
DMN67D8LV-13
Micro Commercial Co
MCAC10H03A-TP
Toshiba Semiconductor and Storage
TPW5200FNH,L1Q
Micro Commercial Co
MCP90N06Y-BP
Nexperia USA Inc.