FCD2250N80Z
onsemi
onsemi
MOSFET N-CH 800V 2.6A DPAK
$1.81
Available to order
Reference Price (USD)
2,500+
$0.47286
5,000+
$0.45053
12,500+
$0.43457
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with FCD2250N80Z by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, FCD2250N80Z ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Diotec Semiconductor
MMFTN3404A
Vishay Siliconix
SIHA6N65E-E3
Toshiba Semiconductor and Storage
SSM3K376R,LF
STMicroelectronics
STB27NM60ND
Diodes Incorporated
2N7002T-7-F
onsemi
FCP190N65F
NXP USA Inc.
PHT6N06LT,135
Diodes Incorporated
DMG6402LVT-7
Vishay Siliconix
SI6423ADQ-T1-GE3
onsemi