FCD1300N80Z
onsemi
onsemi
MOSFET N-CH 800V 4A DPAK
$1.54
Available to order
Reference Price (USD)
2,500+
$0.81468
5,000+
$0.77619
12,500+
$0.74870
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance FCD1300N80Z from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, FCD1300N80Z delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
SPA11N60CFDXKSA1
Vishay Siliconix
IRLZ34PBF
IXYS
IXFH150N20T
PN Junction Semiconductor
P3M12025K3
Microchip Technology
DN2540N8-G
Fairchild Semiconductor
FDD8444L
Infineon Technologies
IRF100B201
Infineon Technologies
BSP320SL6327
Toshiba Semiconductor and Storage
SSM3J145TU,LF
Vishay Siliconix