Shopping cart

Subtotal: $0.00

SPA11N60CFDXKSA1

Infineon Technologies
SPA11N60CFDXKSA1 Preview
Infineon Technologies
MOSFET N-CH 600V 11A TO220-3
$2.91
Available to order
Reference Price (USD)
500+
$2.12948
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-31
  • Package / Case: TO-220-3 Full Pack

Related Products

Vishay Siliconix

IRLZ34PBF

PN Junction Semiconductor

P3M12025K3

Microchip Technology

DN2540N8-G

Fairchild Semiconductor

FDD8444L

Infineon Technologies

IRF100B201

Infineon Technologies

BSP320SL6327

Toshiba Semiconductor and Storage

SSM3J145TU,LF

Vishay Siliconix

SQM47N10-24L_GE3

Vishay Siliconix

SIR872ADP-T1-GE3

Top