P3M12025K3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 113A TO-247-3
$28.74
Available to order
Reference Price (USD)
1+
$28.74000
500+
$28.4526
1000+
$28.1652
1500+
$27.8778
2000+
$27.5904
2500+
$27.303
Exquisite packaging
Discount
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Optimize your electronic systems with P3M12025K3, a high-quality Transistors - FETs, MOSFETs - Single from PN Junction Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, P3M12025K3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 113A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 2.4V @ 17.7mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +21V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 524W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3L
- Package / Case: TO-247-3
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