F415MR12W2M1B76BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY2B-2
$284.06
Available to order
Reference Price (USD)
1+
$284.06000
500+
$281.2194
1000+
$278.3788
1500+
$275.5382
2000+
$272.6976
2500+
$269.857
Exquisite packaging
Discount
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Discover high-performance F415MR12W2M1B76BOMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Infineon Technologies s F415MR12W2M1B76BOMA1 enhance your projects with superior quality and performance.
Specifications
- Product Status: Last Time Buy
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 5.52nF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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