MSCSM170AM039CD3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-D3
$1,510.74
Available to order
Reference Price (USD)
1+
$1510.74000
500+
$1495.6326
1000+
$1480.5252
1500+
$1465.4178
2000+
$1450.3104
2500+
$1435.203
Exquisite packaging
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Discover high-performance MSCSM170AM039CD3AG from Microchip Technology, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Microchip Technology s MSCSM170AM039CD3AG enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
- Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
- Power - Max: 2.4kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -