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MSCSM170AM039CD3AG

Microchip Technology
MSCSM170AM039CD3AG Preview
Microchip Technology
PM-MOSFET-SIC-SBD-D3
$1,510.74
Available to order
Reference Price (USD)
1+
$1510.74000
500+
$1495.6326
1000+
$1480.5252
1500+
$1465.4178
2000+
$1450.3104
2500+
$1435.203
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N Channel (Phase Leg)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
  • Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
  • Power - Max: 2.4kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

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