G20N06D52
Goford Semiconductor
Goford Semiconductor
N60V,RD(MAX)<30M@10V,RD(MAX)<40M
$0.74
Available to order
Reference Price (USD)
1+
$0.74000
500+
$0.7326
1000+
$0.7252
1500+
$0.7178
2000+
$0.7104
2500+
$0.703
Exquisite packaging
Discount
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The G20N06D52 by Goford Semiconductor is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Goford Semiconductor s G20N06D52 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 30V
- Power - Max: 45W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (4.9x5.75)
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