DRDNB26W-7
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN/DIODE SOT363
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Upgrade your projects with the DRDNB26W-7 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer outstanding durability and precision, ensuring optimal performance in any circuit. Key features include high current gain, low saturation voltage, and thermal stability. Ideal for use in power management, signal processing, and automation systems. Diodes Incorporated guarantees top-notch quality and performance. Reach out now to learn more or request a sample!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 220 Ohms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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