RN2103CT(TPL3)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 20V 0.05A CST3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality RN2103CT(TPL3) from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for efficiency and reliability, making them ideal for various electronic applications. These transistors feature excellent performance, low power consumption, and robust construction. Perfect for amplification and switching circuits, they are widely used in consumer electronics, automotive systems, and industrial equipment. Trust Toshiba Semiconductor and Storage for superior semiconductor solutions. Contact us today for a quote or more information!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
Related Products
Toshiba Semiconductor and Storage
RN1109MFV,L3F
Panasonic Electronic Components
DRA5114E0L
Panasonic Electronic Components
UNR222100L
NXP USA Inc.
PDTA124XK,115
Panasonic Electronic Components
DRC9152Z0L
Panasonic Electronic Components
UNR31A100L
Diodes Incorporated
DDTC114EKA-7-F
Diodes Incorporated
DDTC114WUA-7
Infineon Technologies
BCR166WE6327HTSA1
Diodes Incorporated