DDTB114GU-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT323
$0.00
Available to order
Reference Price (USD)
3,000+
$0.06276
6,000+
$0.05520
15,000+
$0.04764
30,000+
$0.04512
75,000+
$0.04260
150,000+
$0.03840
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DDTB114GU-7-F by Diodes Incorporated is a high-performance solution in the Discrete Semiconductor Products sector. These Transistors - Bipolar (BJT) - Single, Pre-Biased are crafted for excellence, featuring high efficiency, low thermal resistance, and long lifespan. Perfect for use in power converters, lighting systems, and communication devices. Diodes Incorporated guarantees superior products and support. Get in touch today to explore our offerings!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
onsemi
MUN2136T1
Toshiba Semiconductor and Storage
RN2103CT(TPL3)
Toshiba Semiconductor and Storage
RN1109MFV,L3F
Panasonic Electronic Components
DRA5114E0L
Panasonic Electronic Components
UNR222100L
NXP USA Inc.
PDTA124XK,115
Panasonic Electronic Components
DRC9152Z0L
Panasonic Electronic Components
UNR31A100L
Diodes Incorporated
DDTC114EKA-7-F
Diodes Incorporated