DMTH61M5SPSWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI506
$1.11
Available to order
Reference Price (USD)
1+
$1.11090
500+
$1.099791
1000+
$1.088682
1500+
$1.077573
2000+
$1.066464
2500+
$1.055355
Exquisite packaging
Discount
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Discover high-performance DMTH61M5SPSWQ-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMTH61M5SPSWQ-13 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (SWP)
- Package / Case: 8-PowerTDFN
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