IPA60R1K5CEXKSA1
Infineon Technologies
Infineon Technologies
IPA60R1K5 - 600V, N-CHANNEL POWE
$0.35
Available to order
Reference Price (USD)
500+
$0.45562
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IPA60R1K5CEXKSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPA60R1K5CEXKSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
Related Products
Diodes Incorporated
DMN10H170SFGQ-13
Infineon Technologies
IPDQ60R045CFD7XTMA1
Toshiba Semiconductor and Storage
TK25V60X5,LQ
Diodes Incorporated
DMP6050SPS-13
Fairchild Semiconductor
FDMS8674
IXYS
IXFP14N55X2M
Infineon Technologies
IAUT300N08S5N011ATMA1
Toshiba Semiconductor and Storage
TPW3R70APL,L1Q
Alpha & Omega Semiconductor Inc.
AONS36306
Infineon Technologies