IPDQ60R045CFD7XTMA1
Infineon Technologies
Infineon Technologies
HIGH POWER_NEW PG-HDSOP-22
$11.30
Available to order
Reference Price (USD)
1+
$11.30020
500+
$11.187198
1000+
$11.074196
1500+
$10.961194
2000+
$10.848192
2500+
$10.73519
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPDQ60R045CFD7XTMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPDQ60R045CFD7XTMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
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