NTTFS3D7N06HLTWG
onsemi
onsemi
MOSFET N-CH 60V 16A/103A 8PQFN
$2.53
Available to order
Reference Price (USD)
1+
$2.53000
500+
$2.5047
1000+
$2.4794
1500+
$2.4541
2000+
$2.4288
2500+
$2.4035
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTTFS3D7N06HLTWG by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTTFS3D7N06HLTWG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 103A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 2V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2383 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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