DMTH41M8SPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 40V 100A PWRDI5060-8
$0.92
Available to order
Reference Price (USD)
1+
$0.91800
500+
$0.90882
1000+
$0.89964
1500+
$0.89046
2000+
$0.88128
2500+
$0.8721
Exquisite packaging
Discount
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Experience the power of DMTH41M8SPSQ-13, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMTH41M8SPSQ-13 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.03W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type K)
- Package / Case: 8-PowerTDFN
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