DMN2050L-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 5.9A SOT23-3
$0.50
Available to order
Reference Price (USD)
3,000+
$0.15113
6,000+
$0.14288
15,000+
$0.13463
30,000+
$0.12473
75,000+
$0.12060
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with DMN2050L-7 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMN2050L-7 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Rohm Semiconductor
RTF025N03TL
Rohm Semiconductor
R6030MNX
onsemi
NTHL065N65S3F
Nexperia USA Inc.
BUK9675-55A,118
Rohm Semiconductor
RAL035P01TCR
Nexperia USA Inc.
2N7002KQBZ
Infineon Technologies
IPW65R110CFDFKSA2
Fairchild Semiconductor
FQI2P25TU
Nexperia USA Inc.
PSMN3R3-60PLQ
Vishay Siliconix