2N7002KQBZ
Nexperia USA Inc.
Nexperia USA Inc.
2N7002KQB/SOT8015/DFN1110D-3
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of 2N7002KQBZ, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, 2N7002KQBZ is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: DFN1110D-3
- Package / Case: 3-XDFN Exposed Pad
Related Products
Infineon Technologies
IPW65R110CFDFKSA2
Fairchild Semiconductor
FQI2P25TU
Nexperia USA Inc.
PSMN3R3-60PLQ
Vishay Siliconix
IRFD123PBF
onsemi
ATP304-TL-H
Nexperia USA Inc.
PMZ130UNEYL
Infineon Technologies
IRLML2030TRPBF
Vishay Siliconix
SIR472ADP-T1-GE3
IXYS
IXFX64N60P3
onsemi